(PDF) DL-100-7-KERSMD Datasheet

Número de pieza	DL-100-7-KERSMD
Descripción	Photo Diodes
Fabricantes	Pacific Silicon Sensor
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No Preview Available ! DL-100-7-KER SMD Position Sensing Photodiodes Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity Parameters: active area Dark current at 10 V Capacitance at 10 V, 100 kHz Spectral responsivity at 633 nm at 850 nm Interelectrode resistance at E = 0 lx Rise time at 10 V, 50 Ω, 865 nm Noise limited resolution at 632 nm, 0.5 µW Position Detection Error 1) at 632 nm Breakdown voltage Package Operating temperature Storage temperature .com1) measurement conditions: uSpot size: 0,5 mm, t4Scan Interval: 1 mm Wavelength: 633 nm .datasheewww.silicon-sensor.com wwwVersion: 02-09-06 DL-100-7-KER SMD 10 x 10 mm 100 mm2 max. 300 nA typ. 80 nA typ. 75 pF typ. 0,4 A/W typ. 0,62 A/W typ. 12 kΩ typ. 4 µs 0.2 µm +/- 1% typ. 30 V Ceramic S.M. -20 ... +70°C -60 ... +100°C Package 22 (SMD) 10.16 15.24 1.6 ANODE 1 CATHODE 2 (2.54) Chip: DL-100-7 Active area: (10 x 10) mm2 CATHODE 1 ANODE 2 21.0 ± 0.2 SMD - Kontaktrückseite SMD - back contact 1.6 www.pacific-sensor.com 1 page

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