DataSheet.jp

H9013 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H9013
部品説明 NPN Silicon Transistor
メーカ Shantou Huashan Electronic
ロゴ Shantou Huashan Electronic ロゴ 



Total 2 pages
		

No Preview Available !

H9013 Datasheet, H9013 PDF,ピン配置, 機能
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H9013
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
ABSOLUTE MAXIMUM RATINGSTa=25℃)
TO-92
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………40V
VCEO——Collector-Emitter Voltage……………………………20V
VEBO——Emitter-Base Voltage………………………………5V
IC——Collector Current……………………………………500mA
ELECTRICAL CHARACTERISTICSTa=25℃)
1EmitterE
2BaseB
3CollectorC
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
VBE(ON)
BVCBO
BVCEO
BVEBO
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
78
40
600
40
20
5
www.dahtFaE s78ChleaE1s1es2itf4icuat.iocno96mF135
G
112—166
Typ Max Unit
Test Conditions
100 nA
100 nA
246
600 mV
1.2 V
730 mV
V
V
V
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μAIC=0
H
144—202
I
176—246

1 Page





ページ 合計 : 2 ページ
PDF
ダウンロード
[ H9013.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
H9012

PNP Silicon Transistor

Shantou Huashan
Shantou Huashan
H9013

NPN Silicon Transistor

Shantou Huashan Electronic
Shantou Huashan Electronic
H9018

NPN Silicon Transistor

Shantou Huashan
Shantou Huashan

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap