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UPD444016 の電気的特性と機能

UPD444016のメーカーはNECです、この部品の機能は「4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPD444016
部品説明 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
メーカ NEC
ロゴ NEC ロゴ 




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UPD444016 Datasheet, UPD444016 PDF,ピン配置, 機能
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
Description
The µPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 5.0 V ± 0.5 V.
The µPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).
Features
262,144 words by 16 bits organization
Fast access time : 8, 10, 12 ns (MAX.)
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
Output Enable input for easy application
Single +5.0 V power supply
Ordering Information
Part number
Package
µPD444016LE-8
µPD444016LE-10
µPD444016LE-12
µPD444016G5-8-7JF
µPD444016G5-10-7JF
µPD444016G5-12-7JF
44-pin plastic SOJ
(10.16 mm (400))
44-pin plastic TSOP (II)
(10.16 mm (400))
(Normal bent)
Access time
ns (MAX.)
8
10
12
8
10
12
Supply current mA (MAX.)
At operating
At standby
220 10
200
190
220
200
190
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14430EJ4V0DS00 (4th edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999

1 Page





UPD444016 pdf, ピン配列
Block Diagram
A0
|
A17
µPD444016
Memory cell array
4,194,304 bits
I/O1 - I/O8
I/O9 - I/O16
/WE
/CS
/LB
/UB
Input data
controller
Sense amplifier /
Switching circuit
Column decoder
Output data
controller
Address buffer
/OE
VCC
GND
Truth Table
/CS /OE /WE /LB /UB
Mode
I/O Supply current
I/O1 - I/O8
I/O9 - I/O16
H
×
×
×
×
Not selected
High impedance
High impedance
ISB
L LHL L
Read
DOUT
DOUT
ICC
LH
DOUT
High impedance
HL
High impedance
DOUT
L×LLL
Write
DIN
DIN
LH
DIN High impedance
HL
High impedance
DIN
L
HH
×
×
Output disable
High impedance
High impedance
L × ×HH
High impedance
High impedance
Remark × : Don’t care
Data Sheet M14430EJ4V0DS
3


3Pages


UPD444016 電子部品, 半導体
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
AC Test Conditions
Input Waveform (Rise and Fall Time 3 ns)
3.0 V
GND
1.5 V
Test Points
1.5 V
Output Waveform
1.5 V
Test Points
1.5 V
µPD444016
Output Load
AC characteristics directed with the note should be measured with the output load shown in Figure 1 or
Figure 2.
Figure 1
(tAA, tACS, tOE, tABD, tOH)
VTT = +1.5 V
Figure 2
(tCLZ, tOLZ, tBLZ, tCHZ, tOHZ, tBHZ, tWHZ, tOW)
+5.0 V
I/O (Output)
ZO = 50
50
30 pF
CL
I/O (Output)
255
480
5 pF
CL
Remark CL includes capacitances of the probe and jig, and stray capacitances.
6 Data Sheet M14430EJ4V0DS

6 Page



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共有リンク

Link :


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4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

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UPD444016-Y

4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

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UPD444016L

4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT

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