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PDF STW7NA90FI Data sheet ( Hoja de datos )
| Número de pieza | STW7NA90FI | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STW7NA90FI (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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STW7NA90
® STH7NA90FI
N - CHANNEL 900V - 1.05Ω - 7A - TO-247/ISOWATT218
FAST POWER MOSFET
TYPE
STW 7NA90
S TH7NA 90F I
V DSS
900 V
900 V
RDS(on)
< 1.3 Ω
< 1.3 Ω
ID
7A
4.7 A
s TYPICAL RDS(on) = 1.05 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
23
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
IDM (•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
VISO
Ts tg
Insulation W ithstand Voltage (DC)
Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1998
Va l u e
ST W7NA90 STH7NA90F I
900
900
± 30
7 4.7
43
30 30
190 70
1.52
0.56
− −− −− −
4000
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/9
1 page  
Gate Charge vs Gate-source Voltage
STW7NA90 - STH7NA90FI
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STW7NA90FI.PDF ] | |
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