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PDF IRG4IBC20KD Data sheet ( Hoja de datos )
| Número de pieza | IRG4IBC20KD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD -91689A
IRG4IBC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE
UltraFast IGBT
Features
• High switching speed optimized for up to 25kHz
C
with low VCE(on)
• Short Circuit Rating 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
VCES = 600V
VCE(on) typ. = 2.27V
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
E
n-channel
@VGE = 15V, IC = 6.3A
• Industry standard TO-220 FULLPAK
Benefits
• Generation 4 IGBTs offer highest efficiencies available
maximizing the power density of the system
• IGBTs optimized for specific application conditions
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI
• Designed to exceed the power handling capability of
equivalent industry-standard IGBTs
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VISOL
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
600
11.5
6.3
23
24
6.3
24
10
2500
± 20
34
14
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.0 (0.07)
Max.
3.7
5.5
65
–––
Units
°C/W
g (oz)
www.irf.com
1
4/24/2000
1 page  
800
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600
Cies
400
200
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.8
VCC = 480V
VGE = 15V
TJ = 25 ° C
IC = 9.0A
0.7
0.6
IRG4IBC20KD
20
VCC = 400V
I C = 9.0A
16
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10 RG 5=0OΩhm
VGE = 15V
VCC = 480V
IC = 18A
1 IC = 9.09AA
IC = 4.5A
0.5
0
10 20 30 40
RRGG ,, GGaattee RReessisistatanncece( Ω(O)hm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| PDF Descargar | [ Datasheet IRG4IBC20KD.PDF ] | |
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