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IRG4IBC20UD の電気的特性と機能

IRG4IBC20UDのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4IBC20UD
部品説明 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4IBC20UD Datasheet, IRG4IBC20UD PDF,ピン配置, 機能
PD -91752A
IRG4IBC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
2.5kV, 60s insulation voltage U
4.8 mm creapage distance to heatsink
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
Tighter parameter distribution
Industry standard Isolated TO-220 FullpakTM
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
outline
Benefits
Simplified assembly
Highest efficiency and power density
HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
Visol
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to CaseU
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
TO-220 FULLPAK
Max.
600
11.4
6.0
52
52
6.5
52
2500
± 20
34
14
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
V
W
°C
Typ.
–––
–––
–––
2.0 (0.07)
Max.
3.7
5.1
65
–––
Units
°C/W
g (oz)
1
4/24/2000

1 Page





IRG4IBC20UD pdf, ピン配列
10.0
8.0
6.0
S qua re wave:
60% of rated
v olta ge
4.0
I
2.0
Ideal diodes
0.0
0.1
IRG4IBC20UD
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P ow e r Dis sip ation = 9.5 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25°C
TJ = 150°C
10
1
0.1
0.1
VGE = 15V
20µs PULSE WIDTH
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
A
100
TJ = 150°C
10
TJ = 25 °C
1
V CC = 10V
0.1 5µs PULSE W IDTH A
4 6 8 10 12
VG E , Ga te -to-Em itter Volta ge (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4IBC20UD 電子部品, 半導体
IRG4IBC20UD
1.2
RG = 50
T J = 150°C
V CC = 480V
V GE = 15V
0.9
0.6
0.3
100
VGE = 20V
T J = 125 oC
10
1
0.0
0
SAFE OPERATING AREA
A 0.1
2 4 6 8 10 12 14
1 10 100
IC , C ollector-to-E m itter Current (A )
VCE , Collector-to-Emitter Voltage (V)
1000
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
100
10
TJ = 1 50 °C
TJ = 1 25 °C
TJ = 25 °C
1
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Volta ge D ro p - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRG4IBC20UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier
International Rectifier
IRG4IBC20UDPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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