|
|
PDF IRG4IBC30WPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4IBC30WPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRG4IBC30WPBF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
PD - 95326
IRG4IBC30WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• 2.5kV, 60s insulation voltage
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Industry standard Isolated TO-220 FullpakTM
outline
• Lead-Free
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Breakdown Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulsed Collector Current
ILM Clamped Inductive Load Current
VGE Gate-to-Emitter Voltage
EARV
PD @ TC = 25°C
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.1V
@VGE = 15V, IC = 12 A
TO-220 FULLPAK
Max.
600
17
8.4
92
92
± 20
180
45
18
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
2.0 (0.07)
Max.
2.8
65
–––
Units
°C/W
g (oz)
www.irf.com
1
6/1/04
1 page  
IRG4IBC30WPbF
2000
1500
1000
VCGiesE
=
=
0V,
Cge
+
f = 1MHz
Cgc , Cce
SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
500
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20 VCC = 400V
I C = 12A
16
12
8
4
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.5 VCC = 480V
VGE
TJ
=
=
15V
25 °C
0.4 IC = 12A
0.3
0.2
0.1
10 RG = O23hΩm
VGE = 15V
VCC = 480V
1
0.1
IC = 24 A
IC = 12 A
IC = 6 A
0.0 0.01
10
0 10 20 30 40 50
-60 -40 -20 0 20 40 60 80 100 120 140 160
RGR,GG, aGtaeteRReseissitsatannccee((OΩh)m)
TJ, Junction Temperature ( °C )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4IBC30WPBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRG4IBC30WPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |