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PDF STP14NF06 Data sheet ( Hoja de datos )
| Número de pieza | STP14NF06 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP14NF06
N-CHANNEL 60V - 0.1Ω - 14A TO-220
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STP14NF10
60 V < 0.12 Ω
s TYPICAL RDS(on) = 0.1Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE AT 100 °C
s APPLICATION ORIENTED
CHARACTERIZATION
ID
14 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
December 2000
Value
Unit
60 V
60 V
±20 V
14 A
10 A
56 A
45 W
0.3 W/°C
6 V/ns
50 mJ
–65 to 175
°C
175
(1) ISD ≤7A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 114A, VDD = 15V
°C
1/8
1 page  
STP14NF06
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STP14NF06.PDF ] | |
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