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PDF IXFH12N50F Data sheet ( Hoja de datos )

Número de pieza IXFH12N50F
Descripción HiPerRF Power MOSFETs F-Class: MegaHertz Switching
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Advanced Technical Information
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
IXFH 12N50F
IXFT 12N50F
VDSS
I
D25
RDS(on)
= 500 V
= 12 A
= 0.4 W
t
rr
£
250
ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
T
stg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
I
DSS
RDS(on)
TO-247 AD (IXFH)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
T
J
£
150°C,
R
G
=
2
W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
TO-247
TO-264
Maximum Ratings
500 V
500 V
±20 V
±30 V
12 A
48 A
12 A
20 mJ
300 mJ
5 V/ns
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.4/6 Nm/lb.in.
6g
4g
Test Conditions
VGS = 0 V, ID = 250uA
VDS = VGS, ID = 2.5 mA
VGS = ±20 V, VDS = 0
V = 0.8 • V
DS DSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
3.0 5.0 V
±100 nA
TJ = 125°C
50 mA
1 mA
0.4 W
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
l RF capable MOSFETs
l Double metal process for low gate
resistance
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic rectifier
Applications
l DC-DC converters
l Switched-mode and resonant-mode
power supplies, >500kHz switching
l DC choppers
l 13.5 MHz industrial applications
l Pulse generation
l Laser drivers
l RF amplifiers
Advantages
l Space savings
l High power density
© 2000 IXYS All rights reserved
98737 (07/00)

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