(PDF) 1N23WG Datasheet - SILICON MIXER DIODE

Número de pieza	1N23WG
Descripción	SILICON MIXER DIODE
Fabricantes	Advanced Semiconductor
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No Preview Available ! 1N23WG SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package • Matched pairs available by adding suffix “M” or “MR” for matched forward and reverse MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C PACKAGE STYLE DO- 23 NONE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS NF F = 9375 MHz RL = 100 Ω Plo = 1.0 mW IF = 30 MHz NFif = 1.5 dB VSWR Z IF frange RL = 22 Ω f = 1000 Hz MINIMUM TYPICAL 335 8.0 MAXIM 6.5 1.3 465 12.4 UNITS dB Ω GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 1 page

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PDF 1N23WG Data sheet ( Hoja de datos )