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5NB90 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 5NB90
部品説明 STP5NB90
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 

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5NB90 Datasheet, 5NB90 PDF,ピン配置, 機能
STP5NB90
STP5NB90FP
N - CHANNEL 900V - 2.3 - 5A - TO-220/TO-220FP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST P5N B90
ST P5N B90 FP
900 V
900 V
< 2.5
< 2.5
5A
5A
s TYPICAL RDS(on) = 2.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
www.DataSsheGet4AUT.cEomCHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY(UPS)
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM () Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
September 1998
Value
STP5NB90 STP5NB90FP
900
900
± 30
5 5(*)
3.1 3.1(*)
20 20
125 40
1.0 0.32
4.5 4.5
2000
-65 to 150
150
( 1) ISD 5 Α, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
V
oC
oC
1/6

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