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IRFP064NのメーカーはPower MOSFETです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFP064N |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | Power MOSFET | ||
ロゴ | |||
このページの下部にプレビューとIRFP064Nダウンロード(pdfファイル)リンクがあります。 Total 8 pages
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 9.1383A
IRFP064N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.008Ω
ID = 110A
S
TO-247AC
Max.
110
80
390
200
1.3
± 20
480
59
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
0.75
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
1 Page 1000
TOP
BOTT OM
VGS
15 V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
4.5 V
100
1000
TOP
BOTT OM
V GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
100
IRFP064N
10
0.1
4.5 V
20µs PULSE W IDTH
TC = 2 5°C
A
1 10 100
VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
4.5V
10
0.1
20µs P ULSE WIDTH
TC = 17 5°C
A
1 10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 2 5 °C
TJ = 1 7 5 ° C
100
10
V DS= 25V
20µs P ULSE W ID TH
1A
4 5 6 7 8 9 10
VGS , Ga te-to-So urce Voltage (V )
Fig 3. Typical Transfer Characteristics
2.0
ID = 98A
1.5
1.0
0.5
0.0
V GS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRFP064N
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01Ω
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
1200
ID
TOP
24A
42A
1000 B OTTOM 59A
800
600
400
200
0 VD D = 2 5V
A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRFP064N データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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IRFP064N | Power MOSFET ( Transistor ) | Power MOSFET |
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