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Número de pieza | IS61LV12816 | |
Descripción | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY | |
Fabricantes | Integrated Silicon Solution | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IS61LV12816 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! IS61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
ISSI®
NOVEMBER 2000
FEATURES
• High-speed access time: 8, 10, 12, and 15 ns
• CMOS low power operation
• TTL and CMOS compatible interface levels
• Single 3.3V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61LV12816 is packaged in the JEDEC standard 44-pin
400-mil SOJ, 44-pin TSOP, 44-pin LQFP, and 48-pin mini
BGA (6mm x 8mm).
A0-A16
DECODER
128K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
1
1 page IS61LV12816
ISSI ®
CAPACITANCE(1)
Symbol Parameter
Conditions
Max.
Unit
CIN Input Capacitance
VIN = 0V
6 pF
COUT
Input/Output Capacitance
VOUT = 0V
8 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-8 ns -10 ns -12 ns
-15 ns
Symbol Parameter
Min. Max Min. Max. Min. Max.
Min. Max. Unit
tRC Read Cycle Time
8 — 10 — 12 —
15 — ns
tAA Address Access Time
—8
— 10 — 12
— 15 ns
tOHA Output Hold Time
3— 3— 3 —
3 — ns
tACE CE Access Time
8 — — 10 — 12
— 15 ns
tDOE OE Access Time
—3 —4 — 5
— 6 ns
tHZOE(2) OE to High-Z Output
—3 —4 — 5
0 6 ns
tLZOE(2) OE to Low-Z Output
0— 0— 0 —
0 — ns
tHZCE(2) CE to High-Z Output
03 04 0 5
0 8 ns
tLZCE(2) CE to Low-Z Output
3— 3— 3 —
3 — ns
tBA LB, UB Access Time
—3 —4 — 5
— 6 ns
tHZB(2) LB, UB to High-Z Output
03 04 0 5
0 6 ns
tLZB(2) LB, UB to Low-Z Output
0— 0— 0 —
0 — ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels
of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
3.3V
319 Ω
3.3V
319 Ω
OUTPUT
30 pF
Including
jig and
scope
Figure 1.
353 Ω
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
OUTPUT
5 pF
Including
jig and
scope
Figure 2.
353 Ω
5
5 Page IS61LV12816
ISSI ®
IS61LV12816 STANDARD VERSION
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No.
8 IS61LV12816-8B
IS61LV12816-8K
IS61LV12816-8LQ
IS61LV12816-8T
10 IS61LV12816-10B
IS61LV12816-10K
IS61LV12816-10LQ
IS61LV12816-10T
12 IS61LV12816-12B
IS61LV12816-12K
IS61LV12816-12LQ
IS61LV12816-12T
15 IS61LV12816-15B
IS61LV12816-15K
IS61LV12816-15LQ
IS61LV12816-15T
Package
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
IS61LV12816 STANDARD VERSION
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No.
Package
8 IS61LV12816-8BI mini BGA (6mm x 8mm)
IS61LV12816-8KI 400-mil Plastic SOJ
IS61LV12816-8LQI LQFP
IS61LV12816-8TI Plastic TSOP
10 IS61LV12816-10BI mini BGA (6mm x 8mm)
IS61LV12816-10KI 400-mil Plastic SOJ
IS61LV12816-10LQI LQFP
IS61LV12816-10TI Plastic TSOP
12 IS61LV12816-12BI mini BGA (6mm x 8mm)
IS61LV12816-12KI 400-mil Plastic SOJ
IS61LV12816-12LQI LQFP
IS61LV12816-12TI Plastic TSOP
15 IS61LV12816-15BI mini BGA (6mm x 8mm)
IS61LV12816-15KI 400-mil Plastic SOJ
IS61LV12816-15LQI LQFP
IS61LV12816-15TI Plastic TSOP
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
ISSI®
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: [email protected]
www.issi.com
11
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet IS61LV12816.PDF ] |
Número de pieza | Descripción | Fabricantes |
IS61LV12816 | 128K x 16 HIGH-SPEED CMOS STATIC RAM | Integrated Circuit Solution |
IS61LV12816 | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY | Integrated Silicon Solution |
IS61LV12816 | 128K x 16 HIGH-SPEED CMOS STATIC RAM | ISSI |
IS61LV12816L | 128K x 16 HIGH-SPEED CMOS STATIC RAM | Integrated Silicon Solution |
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