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PDF IRFM250 Data sheet ( Hoja de datos )
| Número de pieza | IRFM250 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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IRFM250
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
123
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
N–CHANNEL
POWER MOSFET
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
VDSS
ID(cont)
RDS(on)
200V
27.4A
0.100Ω
FEATURES
• N–CHANNEL MOSFET
• HIGH VOLTAGE
• INTEGRAL PROTECTION DIODE
• HERMETIC ISOLATED TO-254 PACKAGE
3.81 (0.150)
BSC
• CERAMIC SURFACE MOUNT PACKAGE
OPTION
TO–254AA – Isolated Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VGS Gate – Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Max. Power Dissipation
Linear Derating Factor
@ VGS = 10V , TC = 25°C
@ VGS = 10V , TC = 100°C
@ TC = 25°C
±20V
27.4A
17A
110A
150W
1.2W / °C
IL
dv / dt
Avalanche Current , Clamped 1
Peak Diode Recovery 2
27.4A
5.5V / ns
RθJC
RθJA
RθCS
TJ , TSTG
TL
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
Operating Junction and Storage Temperature Range
Lead Temperature (1.6mm from case for 10s)
0.83°C / W
48°C / W
0.21°C / W typ.
–55 to 150°C
300°C
1) VDD = 50V , Starting TJ = 25°C , L ≥ 1mH , RG = 25Ω , Peak IL = 27.4A
2) ISD ≤ 27.4A , di/dt ≤ 190A / µS , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 2.35Ω
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRFM250.PDF ] | |
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