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IRFM260のメーカーはInternational Rectifierです、この部品の機能は「TRANSISTOR N-CHANNEL」です。 |
部品番号 | IRFM260 |
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部品説明 | TRANSISTOR N-CHANNEL | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFM260ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
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Provisional Data Sheet No. PD-9.1388A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRFM260
N-CHANNEL
200Volt, 0.060Ω, HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET tran-
sistors. The efficient geometry design achieves very
low on-state resistance combined with high
transconductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material be-
tween the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Product Summary
Part Number BVDSS
IRFM260
200V
Features:
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelet
RDS(on)
0.060Ω
ID
35A*
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
Pre-Radiation
IRFM260
Units
35*
28 A
180
250 W
2.0 W/K
±20 V
700 mJ
35 A
25 mJ
4.3 V/ns
-55 to 150
oC
300(0.063 in.(1.6mm) from case for 10s)
9.3 (typical)
g
1 Page Previous Datasheet
Index
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IRFM260
1000
TOP
BOTT OM
VGS
15 V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
4.5 V
100
1000
100
TOP
BOTT OM
V GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
4.5 V
20µs PULSE W IDTH
1
TC = 2 5°C
A
0.1 1
10 100
VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics,
TJ = 25oC
1000
100
TJ = 150°C
TJ = 2 5 °C
10
VDS = 50V
20µs PU LSE W ID TH
1A
4 5 6 7 8 9 10
VGS , Ga te-to-So urce Voltage (V )
Fig 3. Typical Transfer Characteristics
4.5 V
10
20µs PULSE W IDTH
1
TJ = 150°C
A
0.1 1
10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics,
TJ = 150oC
2.5
ID = 46A
2.0
1.5
1.0
0.5
0.0
-60
V GS = 10V
A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
To Order
3Pages Previous Datasheet
Index
Next Data Sheet
IRFM260
1600
15 V
1200
TOP
B OTTO M
ID
16A
22A
35A
VDS
L
DRIV ER
RG
2 0V
tp
D .U .T
IA S
0 .0 1Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS
tp
800
400
0A
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
To Order
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRFM260 | TRANSISTOR N-CHANNEL | International Rectifier |