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PDF IRFM350 Data sheet ( Hoja de datos )
| Número de pieza | IRFM350 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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IRFM350
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
N–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
400V
14A
0.315W
FEATURES
123
• N–CHANNEL MOSFET
• HIGH VOLTAGE
• INTEGRAL PROTECTION DIODE
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
• HERMETIC ISOLATED TO-254 PACKAGE
• CERAMIC SURFACE MOUNT PACKAGE
OPTION
TO–254AA – Isolated Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VGS Gate – Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Max. Power Dissipation
Linear Derating Factor
@ VGS = 10V , TC = 25°C
@ VGS = 10V , TC = 100°C
@ TC = 25°C
±20V
14A
9.0A
56A
150W
1.2W / °C
IL
dv / dt
Avalanche Current , Clamped 1
Peak Diode Recovery 2
14A
4V / ns
RqJC
RqJA
RqCS
TJ , TSTG
TL
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
Operating Junction and Storage Temperature Range
Lead Temperature (1.6mm from case for 10s)
0.83°C / W
48°C / W
0.21°C / W typ.
–55 to 150°C
300°C
1) VDD = 50V , Starting TJ = 25°C , L ³ 1mH , RG = 25W , Peak IL = 27.4A
2) ISD £ 27.4A , di/dt £ 190A / mS , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 2.35W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 05/00
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRFM350.PDF ] | |
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