DataSheet.jp

IRFM064 の電気的特性と機能

IRFM064のメーカーはInternational Rectifierです、この部品の機能は「POWER MOSFET THRU-HOLE (TO-254AA)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFM064
部品説明 POWER MOSFET THRU-HOLE (TO-254AA)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRFM064ダウンロード(pdfファイル)リンクがあります。

Total 7 pages

No Preview Available !

IRFM064 Datasheet, IRFM064 PDF,ピン配置, 機能
PD - 90875A
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on)
IRFM064
0.017
ID
35A*
IRFM064
60V, N-CHANNEL
HEXFET® MOSFET TECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Units
35*
35* A
380
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
620
4.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
*Current is limited by pin diameter
For footnotes refer to the last page
www.irf.com
1
1/29/02

1 Page





IRFM064 pdf, ピン配列
IRFM064
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFM064 電子部品, 半導体
IRFM064
15V
VDS
L
D R IV E R
RG
210 V
tp
D.U .T.
IA S
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
102V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ IRFM064 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFM064

POWER MOSFET THRU-HOLE (TO-254AA)

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap