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IRFM214B PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFM214B
部品説明 250V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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IRFM214B Datasheet, IRFM214B PDF,ピン配置, 機能
November 2001
IRFM214B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
• 0.64A, 250V, RDS(on) = 2.0@VGS = 10 V
• Low gate charge ( typical 8.1 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• Improved dv/dt capability
D
S
G SOT-223
IRFM Series
D
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G!
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S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
IRFM214B
250
0.64
0.51
5.0
± 30
45
0.64
0.21
5.5
2.1
0.017
-55 to +150
300
Typ Max
-- 60
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

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250V N-Channel MOSFET

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