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IRLMS2002のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRLMS2002 |
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部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLMS2002ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 2.5V Rated
D
D
G
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
PD- 93758D
IRLMS2002
HEXFET® Power MOSFET
A
1 6D
VDSS = 20V
2 5D
3 4 S RDS(on) = 0.030Ω
Top View
Micro6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
6.5
5.2
20
2.0
1.3
0.016
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
www.irf.com
Max.
62.5
Units
°C/W
1
01/13/03
1 Page 100
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
10
1.50V
20µs PULSE WIDTH
TJ= 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRLMS2002
100
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
10
1.50V
20µs PULSE WIDTH
TJ= 150 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150° C
10
V DS= 15V
20µs PULSE WIDTH
1
1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 5.3A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRLMS2002
0.040
0.10
0.035
0.08
0.030
0.06
0.025
Id = 5.3A
0.020
2.0
3.0 4.0 5.0 6.0 7.0
VGS, Gate -to -Source Voltage ( V )
8.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.04
0.02
0
VGS= 2.5V
VGS = 4.5V
10 20 30
ID, - Drain Current (A )
40
Fig 13. Typical On-Resistance Vs.
Drain Current
6 www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRLMS2002 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRLMS2002 | HEXFET Power MOSFET | International Rectifier |
IRLMS2002PbF | HEXFET Power MOSFET | International Rectifier |