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IRLMS4502 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLMS4502
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 7 pages
		

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IRLMS4502 Datasheet, IRLMS4502 PDF,ピン配置, 機能
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD- 93759B
IRLMS4502
HEXFET® Power MOSFET
D1
D2
A
6D
5D
VDSS = -12V
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications..
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
3 4S
Top View
RDS(on) = 0.042
Micro6ä
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
-12
-5.5
-4.4
-44
1.7
1.1
0.013
28
± 12
-55 to + 150
Max.
75
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
01/13/03

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