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IRLMS5703 の電気的特性と機能

IRLMS5703のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLMS5703
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLMS5703 Datasheet, IRLMS5703 PDF,ピン配置, 機能
l Generation V Technology
l Micro6 Package Style
l Ultra Low Rds(on)
l P-Channel MOSFET
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
PD - 91413E
IRLMS5703
HEXFET® Power MOSFET
D1
A
6D
D2
5D
G3
4S
T op V iew
VDSS = -30V
RDS(on) = 0.20
M icro6
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @- 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-2.3
-1.9
-13
1.7
13
± 20
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max
75
Units
°C/W
4/7/04

1 Page





IRLMS5703 pdf, ピン配列
1 0 0 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
10
IRLMS5703
1 0 0 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
10
1
-3 .0V
0.1
0.1
20µs P ULSE WIDTH
TJ = 25 °C
A
1 10
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
1
-3.0 V
0.1
0.1
20µs P ULSE WIDTH
TJ = 15 0°C
A
1 10
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
100
10
TJ = 2 5 °C
TJ = 1 5 0 °C
1
0.1
3.0
V DS = -1 0 V
20µs PULSE W IDTH
4.0 5.0 6.0 7.0 8.0A
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
2.0
ID = -1.6A
1.5
1.0
0.5
0.0
-60
VGS = -10V
A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRLMS5703 電子部品, 半導体
IRLMS5703
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
‚
-
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
„
-+

RG
VGS*
**
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
VDD*
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
[VDD]
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRLMS5703

HEXFET Power MOSFET

International Rectifier
International Rectifier


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