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PDF IRLM210A Data sheet ( Hoja de datos )
| Número de pieza | IRLM210A | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
n Lower RDS(ON) : 1.185 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TA=25oC)
Continuous Drain Current (TA=70oC)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Linear Derating Factor *
③
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
IRLM210A
BVDSS = 200 V
RDS(on) = 1.5 Ω
ID = 0.77 A
SOT-223
1
3
2
1. Gate 2. Drain 3. Source
Value
200
0.77
0.62
6.1
±20
27
0.77
0.18
5.0
1.8
0.014
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJA
Characteristic
Junction-to-Ambient *
Typ.
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
69.4
Units
oC/W
Rev. A
1 page  
N-CHANNEL
POWER MOSFET
IRLM210A
Fig 12. Gate Charge Test Circuit & Waveform
＂Current Regulator＂
50KΩ
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
VDS
5V
Qgs
DUT
3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
Vout
Vin
RG
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
Vin 10%
5V
td(on)
tr
t on
td(off)
tf
t off
Vary tp to obtain
required peak ID
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
RG
5V
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRLM210A.PDF ] | |
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