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PDF P3NB60FP Data sheet ( 特性 )

部品番号 P3NB60FP
部品説明 STP3NB60
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 

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P3NB60FP Datasheet, P3NB60FP PDF,ピン配置, 機能
t4U.com STP3NB60
ee STP3NB60FP
Sh N - CHANNEL ENHANCEMENT MODE
ata PowerMESHMOSFET
w.DTYPE
w STP3NB60
w STP3NB60FP
VDSS
600 V
600 V
RDS(on)
<3.6
< 3.6
ID
3.3 A
2.2 A
s TYPICAL RDS(on) = 3.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms VERY LOW INTRINSIC CAPACITANCES
os GATE CHARGE MINIMIZED
.cDESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
Uadvanced family of power MOSFETs with
t4outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
elowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
eand switching characteristics.
hAPPLICATIONS
Ss HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
tas DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
aPOWER SUPPLIES AND MOTOR DRIVE
.DABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wVDS
wVDGR
wVGS
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP3NB60 STP3NB60FP
600
600
± 30
Unit
V
V
V
ID
ID
IDM()
Ptot
dv/dt(1)
VISO
Tstg
Tj
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
March 1998
3.3 2.2
m2.1 1.4
o13.2
13.2
.c80 35
U0.64
0.28
t44.5 4.5
ee2000
h-65 to 150
www.DataS150
A
A
A
W
W/oC
V/ns
V
oC
oC
1/9

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