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IRFU9310 の電気的特性と機能

IRFU9310のメーカーはIRFです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU9310
部品説明 Power MOSFET ( Transistor )
メーカ IRF
ロゴ IRF ロゴ 




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IRFU9310 Datasheet, IRFU9310 PDF,ピン配置, 機能
PRELIMINARY
l P-Channel
l Surface Mount (IRFR9310)
l Straight Lead (IRFU9310)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
PD 9.1663
IRFR/U9310
HEXFET® Power MOSFET
D
VDSS = -400V
RDS(on) = 7.0
S ID = -1.8A
D-Pak
TO -252A A
I-Pak
TO -2 5 1 AA
Max.
-1.8
-1.1
-7.2
50
0.40
± 20
92
-1.8
5.0
-24
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
2.5
50
110
Units
°C/W
7/30/97

1 Page





IRFU9310 pdf, ピン配列
10
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
1
-4.5V
0.1
1
20µs PULSE WIDTH
TJ = 25 °C
10 100
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRFR/U9310
10
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
1
-4.5V
0.1
1
20µs PULSE WIDTH
TJ = 150 °C
10 100
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10
TJ = 25 °C
TJ = 150 °C
1
0.1
4
V DS = -50V
20µs PULSE WIDTH
56 78 9
-VGS , Gate-to-Source Voltage (V)
10
Fig 3. Typical Transfer Characteristics
2.5
ID = -1.8A
2.0
1.5
1.0
0.5
VGS= -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRFU9310 電子部品, 半導体
IRFR/U9310
VDS
L
RG
-20V
tp
D .U .T
IAS
0 .0 1
D R IV E R
VD D
A
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
200
ID
TOP
-0.8A
-1.1A
160 BOTTOM -1.8A
120
80
40
0
25 50 75 100 125 150
Starting TJ, Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

6 Page



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共有リンク

Link :


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IRFU9310

Power MOSFET ( Transistor )

IRF
IRF
IRFU9310

Power MOSFET ( Transistor )

Vishay Siliconix
Vishay Siliconix
IRFU9310PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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