|
|
Número de pieza | IXFN80N50 | |
Descripción | (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXFN80N50 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFN 80N50
IXFN 75N50
D
G
VDSS
500 V
500 V
ID25
80 A
75 A
RDS(on)
50 mΩ
55 mΩ
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
I
DM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Symbol
VDSS
VGH(th)
IGSS
I
DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
S
S
Maximum Ratings
75N50
80N50
75N50
80N50
500
500
±20
±30
75
80
300
320
V
V
V
V
A
A
A
A
80 A
64 mJ
6J
5 V/ns
700
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Test Conditions
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500
2
TJ = 25°C
TJ = 125°C
80N50
75N50
V
4V
±200 nA
100 µA
2 mA
50 mΩ
55 mΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
• Internationalstandardpackages
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Ruggedpolysilicongatecellstructure
• Unclamped Inductive Switching (UIS)
rated
• Lowpackageinductance
• FastintrinsicRectifier
Applications
• DC-DC converters
• Batterychargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperatureandlightingcontrols
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98538C (02/02)
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet IXFN80N50.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFN80N50 | (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET | IXYS Corporation |
IXFN80N50P | PolarHV HiPerFET Power MOSFET | IXYS |
IXFN80N50Q2 | HiPerFET Power MOSFET | IXYS |
IXFN80N50Q3 | Power MOSFET ( Transistor ) | IXYS Corporation |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |