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PDF IXFN80N50 Data sheet ( Hoja de datos )

Número de pieza IXFN80N50
Descripción (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXFN80N50 Hoja de datos, Descripción, Manual

HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFN 80N50
IXFN 75N50
D
G
VDSS
500 V
500 V
ID25
80 A
75 A
RDS(on)
50 m
55 m
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
I
DM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Symbol
VDSS
VGH(th)
IGSS
I
DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL 1 mA
t=1s
Mounting torque
Terminal connection torque
S
S
Maximum Ratings
75N50
80N50
75N50
80N50
500
500
±20
±30
75
80
300
320
V
V
V
V
A
A
A
A
80 A
64 mJ
6J
5 V/ns
700
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Test Conditions
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs,
duty cycle d 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500
2
TJ = 25°C
TJ = 125°C
80N50
75N50
V
4V
±200 nA
100 µA
2 mA
50 m
55 m
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
Internationalstandardpackages
miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Ruggedpolysilicongatecellstructure
Unclamped Inductive Switching (UIS)
rated
Lowpackageinductance
FastintrinsicRectifier
Applications
DC-DC converters
Batterychargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperatureandlightingcontrols
Advantages
Easy to mount
Space savings
High power density
© 2002 IXYS All rights reserved
98538C (02/02)

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