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IRFU2605のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFU2605 |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFU2605ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
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HEXFET® Power MOSFET
Ultra Low On-Resistance
ESD Protected
Surface Mount (IRFR2605)
Straight Lead (IRFU2605)
150°C Operating Temperature
Repetitive Avalanche Rated
Fast Switching
Description
PD - 9.1253
IRFR2605
IRFU2605
D
G
S
VDSS = 55V
RDS(on) = 0.075Ω
ID = 19A
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques that achieve extremely low on-resistance per silicon area
and allow electrostatic discharge protection to be integrated in the gate structure.
These benefits, combined with the ruggedized device design that HEXFETs are
known for, provide the designer with extremely efficient and reliable device for use
in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 watts are possible in
typical surface mount applications.
Absolute Maximum Ratings
D-PAK
TO-252AA
I-PAK
TO-251AA
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
VESD
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Human Body Model, 100pF, 1.5K Ω
Max.
19
12
76
50
3.1
0.40
0.025
±20
100
12
5.0
4.5
-55 to + 150
300 (1.6mm from case)
2000
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
Thermal Resistance
Parameter
Min.
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
——
——
——
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
2.5
40
62
Units
°C/W
To Order
1 Page Previous Datasheet
Index
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IRFR2605
IRFU2605
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
0.1
0.01
20µs PULSE WIDTH
TC = 25°C
A
0.1 1 10 1 00
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TC = 25oC
0.1
0.01
20µs PULSE WIDTH
TC = 150°C
A
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics,
TC = 150oC
100 2.0
ID = 19A
TJ = 25°C
TJ = 150°C
1.5
10 1.0
VDS = 25V
20µs PULSE WIDTH
1A
4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
To Order
3Pages Previous Datasheet
IRFR2605
IRFU2605
Index
Next Data Sheet
10 V
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
200 I D
TOP
4.9A
7.0A
160 BOTTOM 11A
120
80
40
0 VDD = 25V
A
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
To Order
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFU2605 | Power MOSFET ( Transistor ) | International Rectifier |
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