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2SC536 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 2SC536
部品説明 TO-92 Plastic Encapsulate Transistors
メーカ Jiangsu Changjiang Electronics Technology
ロゴ Jiangsu Changjiang Electronics Technology ロゴ 

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2SC536 Datasheet, 2SC536 PDF,ピン配置, 機能
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC536 TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
PCM:
400 mW (Tamb=25)
Collector current
ICM: 100 mA
Collector-base voltage
V(BR)CBO:
40 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=6V, f=1MHz
MIN TYP MAX UNIT
40 V
30 V
5V
1 µA
1 µA
60 960
0.5 V
100 MHz
3.5 pF
CLASSIFICATION OF hFE
Rank
D
Range
60-120
E
100-200
F
160-320
G
280-560
H
480-960

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