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PDF STB75NF75L Data sheet ( Hoja de datos )
| Número de pieza | STB75NF75L | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP75NF75L
STB75NF75L STB75NF75L-1
N-CHANNEL 75V - 0.009 Ω - 75A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STB75NF75L/-1
STP75NF75L
75 V
75 V
<0.011 Ω
<0.011 Ω
s TYPICAL RDS(on) = 0.009Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
ID
75 A
75 A
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s DC MOTOR CONTROL
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D2PAK
TO-263
123
I2PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(•)
Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Current limited by package
(••) Pulse width limited by safe operating area.
April 2002
.
Value
75
75
± 15
75
70
300
300
2
20
680
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 37.5A, VDD = 30V
1/11
1 page  
Normalized Gate Threshold Voltage vs Temperature
STB75NF75L/-1 STP75NF75L
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
5/11
5 Page 
STB75NF75L/-1 STP75NF75L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
11/11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet STB75NF75L.PDF ] | |
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