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IRFZ48N の電気的特性と機能

IRFZ48NのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel enhancement mode TrenchMOS transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFZ48N
部品説明 N-channel enhancement mode TrenchMOS transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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IRFZ48N Datasheet, IRFZ48N PDF,ピン配置, 機能
Philips Semiconductors
N-channel enhancement mode
TrenchMOSTM transistor
Product specification
IRFZ48N
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in switched mode
power supplies and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
55
64
140
175
16
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
UNIT
V
A
W
˚C
m
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k)
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
64
45
210
140
175
UNIT
V
V
V
A
A
A
W
˚C
MIN.
-
MAX.
2
UNIT
kV
TYP.
-
60
MAX.
1.1
-
UNIT
K/W
K/W
February 1999
1
Rev 1.000

1 Page





IRFZ48N pdf, ピン配列
Philips Semiconductors
N-channel enhancement mode
TrenchMOSTM transistor
Product specification
IRFZ48N
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR Continuous reverse drain
current
IDRM Pulsed reverse drain current
VSD Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 65 A; VGS = 0 V
trr Reverse recovery time IF = 65 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
- - 64 A
- - 210 A
- 0.95 1.2 V
- 1.0 -
V
- 57 -
- 0.14 -
ns
µC
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 65 A; VDD 25 V;
VGS = 10 V; RGS = 50 ; Tmb = 25 ˚C
MIN.
-
TYP.
-
MAX. UNIT
200 mJ
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100PD/PD 25 ˚C = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100ID/ID 25 ˚C = f(Tmb); conditions: VGS 5 V
February 1999
3
Rev 1.000


3Pages


IRFZ48N 電子部品, 半導体
Philips Semiconductors
N-channel enhancement mode
TrenchMOSTM transistor
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 LID2 BVDSS/(BVDSS VDD)
Product specification
IRFZ48N
+ VDD
RD
VGS
0
VDS
-
RG T.U.T.
Fig.17. Switching test circuit.
February 1999
6
Rev 1.000

6 Page



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