|
|
IRFZ48RのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFZ48R |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFZ48Rダウンロード(pdfファイル)リンクがあります。 Total 8 pages
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
l Drop in Replacement of the IRFZ48
for Linear/Audio Applications
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 93958
IRFZ48R
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 0.018Ω
ID = 50*A
S
TO-220AB
Max.
50*
50*
290
190
1.3
± 20
100
50
19
4.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.8
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
8/24/00
1 Page IRFZ48R
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
www.irf.com
Fig 2. Typical Output Characteristics
2.5 ID = 72A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFZ48R
15V
VDS
L
D RIVER
RG
20V
tp
D .U .T
IA S
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
250 ID
TOP
29A
51A
200 BOTTOM 72A
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRFZ48R データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFZ48 | Power MOSFET ( Transistor ) | Vishay |
IRFZ48L | Power MOSFET ( Transistor ) | Vishay |
IRFZ48N | N-channel enhancement mode TrenchMOS transistor | NXP Semiconductors |
IRFZ48N | Power MOSFET ( Transistor ) | International Rectifier |