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IRFZ48Z PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFZ48Z
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFZ48Z Datasheet, IRFZ48Z PDF,ピン配置, 機能
PD - 94763
AUTOMOTIVE MOSFET
IRFZ48Z
IRFZ48ZS
Features
O Advanced Process Technology
O Ultra Low On-Resistance
IRFZ48ZL
HEXFET® Power MOSFET
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
D
VDSS = 55V
O Repetitive Avalanche Allowed up to Tjmax
Description
G
RDS(on) = 11m
Specifically designed for Automotive applica-
tions, this HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve extremely
S ID = 61A
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
TO-220AB
IRFZ48Z
D2Pak
IRFZ48ZS
TO-262
IRFZ48ZL
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
cPulsed Drain Current
Maximum Power Dissipation
61
43
240
91
A
W
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
0.61
± 20
73
120
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
–––
0.50
–––
–––
1.64 °C/W
–––
62
40
www.irf.com
1
08/27/03

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