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PDF IRFZ44NS Data sheet ( Hoja de datos )
| Número de pieza | IRFZ44NS | |
| Descripción | N-channel enhancement mode TrenchMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
N-channel enhancement mode
TrenchMOSTM transistor
Product specification
IRFZ44NS
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a surface mounting
plastic envelope using ’trench’
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in switched mode power supplies
and general purpose switching
applications.
PINNING - SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
2 drain
3 source
mb drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
55
49
110
175
22
PIN CONFIGURATION
mb
2
13
SYMBOL
d
g
s
UNIT
V
A
W
˚C
mΩ
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
Minimum footprint, FR4
board
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
49
35
160
110
175
UNIT
V
V
V
A
A
A
W
˚C
MIN.
-
MAX.
2
UNIT
kV
TYP.
-
50
MAX.
1.4
-
UNIT
K/W
K/W
February 1999
1
Rev 1.000
1 page  
Philips Semiconductors
N-channel enhancement mode
TrenchMOSTM transistor
Product specification
IRFZ44NS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2% typ
98%
1E-04
1E-05
1E-06
01234
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
5
2.5
2
1.5
Ciss
1
.5
0
0.01 0.1
1 VDS/V 10
Coss
Crss
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
12
VGS/V
10
8
6
VDS = 14V
VDS = 44V
4
2
0
0 10 20 QG/nC 30 40 50
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 50 A; parameter VDS
100
IF/A
80
60
Tj/C =
175
25
40
20
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSDS/V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 49 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
February 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFZ44NS.PDF ] | |
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