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IRFU12N25D の電気的特性と機能

IRFU12N25DのメーカーはInternational Rectifierです、この部品の機能は「(IRFR12N25D / IRFU12N25D) SMPS MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU12N25D
部品説明 (IRFR12N25D / IRFU12N25D) SMPS MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFU12N25D Datasheet, IRFU12N25D PDF,ピン配置, 機能
PD - 94296A
SMPS MOSFET
IRFR12N25D
IRFU12N25D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
250V
RDS(on) max
0.26
ID
14A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
I-Pak
IRFR12N25D IRFU12N25D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max.
14
9.7
56
144
0.96
± 30
9.3
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
1.04
50
110
Units
°C/W
1
09/21/01

1 Page





IRFU12N25D pdf, ピン配列
IRFR12N25D/IRFU12N25D
100
VGS
TOP
15V
12V
10V
10 8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
0.01
0.001
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
10 5.5V
BOTTOM 5.0V
5.0V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 175°C
1.00
TJ = 25°C
0.10
0.01
5.0
VDS = 15V
20µs PULSE WIDTH
7.0
9.0
11.0
13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5
ID = 14A
3.0
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFU12N25D 電子部品, 半導体
IRFR12N25D/IRFU12N25D
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
550
ID
TOP
3.4A
5.9A
440
BOTTOM
8.4A
330
220
110
0
25 50 75 100 125
Starting T , JJunction Temperature
150 175
( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFU12N25D

(IRFR12N25D / IRFU12N25D) SMPS MOSFET

International Rectifier
International Rectifier
IRFU12N25DPbF

SMPS MOSFET

International Rectifier
International Rectifier


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