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IRFU1010Z PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFU1010Z
部品説明 (IRFR1010Z / IRFU1010Z) AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFU1010Z Datasheet, IRFU1010Z PDF,ピン配置, 機能
PD - 96897
AUTOMOTIVE MOSFET
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
jJunction-to-Case
ijJunction-to-Ambient (PCB mount)
jJunction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
IRFR1010Z
IRFU1010Z
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 7.5m
S ID = 42A
D-Pak
IRFR1010Z
I-Pak
IRFU1010Z
Max.
91
65
42
360
140
0.9
± 20
110
220
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.11
40
110
Units
°C/W
1
9/29/04

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