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IRFU1010Z の電気的特性と機能

IRFU1010ZのメーカーはInternational Rectifierです、この部品の機能は「(IRFR1010Z / IRFU1010Z) AUTOMOTIVE MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU1010Z
部品説明 (IRFR1010Z / IRFU1010Z) AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFU1010Z Datasheet, IRFU1010Z PDF,ピン配置, 機能
PD - 96897
AUTOMOTIVE MOSFET
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
jJunction-to-Case
ijJunction-to-Ambient (PCB mount)
jJunction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
IRFR1010Z
IRFU1010Z
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 7.5m
S ID = 42A
D-Pak
IRFR1010Z
I-Pak
IRFU1010Z
Max.
91
65
42
360
140
0.9
± 20
110
220
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.11
40
110
Units
°C/W
1
9/29/04

1 Page





IRFU1010Z pdf, ピン配列
IRFR/U1010Z
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
0.1
4.5V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10 4.5V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
120
100 TJ = 25°C
80 TJ = 175°C
60
40
20
0
0
VDS = 10V
380µs PULSE WIDTH
20 40 60 80
ID,Drain-to-Source Current (A)
100
Fig 4. Typical Forward Transconductance
vs. Drain Current
3


3Pages


IRFU1010Z 電子部品, 半導体
IRFR/U1010Z
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
6
500
ID
TOP 7.6A
400 11A
BOTTOM 42A
300
200
100
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
4.0
ID = 1.0mA
3.5 ID = 250µA
ID = 100µA
3.0
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFU1010Z

(IRFR1010Z / IRFU1010Z) AUTOMOTIVE MOSFET

International Rectifier
International Rectifier
IRFU1010ZPBF

AUTOMOTIVE MOSFET

International Rectifier
International Rectifier


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