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IRFU110 の電気的特性と機能

IRFU110のメーカーはIntersil Corporationです、この部品の機能は「(IRFR110 / IRFU110) N-Channel Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU110
部品説明 (IRFR110 / IRFU110) N-Channel Power MOSFETs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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IRFU110 Datasheet, IRFU110 PDF,ピン配置, 機能
Data Sheet
IRFR110, IRFU110
July 1999 File Number 3275.3
4.7A, 100V, 0.540 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These advanced
power MOSFETs are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFU110
TO-251AA
IFU110
IRFR110
TO-252AA
IFR110
NOTE: When ordering, use the entire part number.
Features
• 4.7A, 100V
• rDS(ON) = 0.540
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
4-371
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 Page





IRFU110 pdf, ピン配列
IRFR110, IRFU110
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 2)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN TYP MAX UNITS
- - 4.7 A
- - 17 A
Source to Drain Diode Voltage (Note 4)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 4.7A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs
- - 2.5
46 96 200
0.17 0.38 0.83
NOTES:
2. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
3. VDD = 25V, starting TJ = 25oC, L = 1.3mH, RG = 25, peak IAS = 4.7A.
4. Pulse test: pulse width 300µs, duty cycle 2%.
Typical Performance Curves Unless Otherwise Specified
V
ns
µC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
5
4
3
2
1
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1 0.2
0.1
0.05
0.02
0.1 0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
10-1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1 10
4-373


3Pages


IRFU110 電子部品, 半導体
Test Circuits and Waveforms
IRFR110, IRFU110
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
RL
+
RG
VDD
-
DUT
VGS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50k
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
G DUT
IG(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
IG(REF)
0
FIGURE 20. GATE CHARGE WAVEFORMS
4-376

6 Page



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共有リンク

Link :


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IRFU110

(IRFR110 / IRFU110) N-Channel Power MOSFETs

Intersil Corporation
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