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IRFR1205 の電気的特性と機能

IRFR1205のメーカーはInternational Rectifierです、この部品の機能は「(IRFR1205 / IRFU1205) Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFR1205
部品説明 (IRFR1205 / IRFU1205) Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFR1205 Datasheet, IRFR1205 PDF,ピン配置, 機能
l Ultra Low On-Resistance
l Surface Mount (IRFR1205)
l Straight Lead (IRFU1205)
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
G
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚‡
Avalanche Current‡
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
PD - 91318B
IRFR/U1205
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.027
ID = 44A…
S
D-PAK
T O -252 AA
I-P A K
T O -25 1AA
Max.
44…
31…
160
107
0.71
± 20
210
25
11
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
1
5/11/98

1 Page





IRFR1205 pdf, ピン配列
IRFR/U1205
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10 4.5V
4 .5 V
10
20µs PULSE W IDTH
1
TC = 2 5°C
A
0.1 1
10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE W IDTH
1
TC = 175°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 2 5 °C
100
TJ = 1 7 5 °C
2.5
ID = 41A
2.0
1.5
1.0
10
0.5
VDS = 25V
tion
2 0 µ s P U LS E W ID T H
1A
4 5 6 7 8 9 10
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , G ate-to-Source Voltag e (V)
TJ , Junction Tem perature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3


3Pages


IRFR1205 電子部品, 半導体
IRFR/U1205
15V
VDS
L
D R IV E R
RG
10V
tp
D.U .T
IA S
0 .0 1
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
500
ID
TOP 10A
18A
400 BOTTOM 25A
300
200
100
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
5.0 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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[ IRFR1205 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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IRFR120

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Vishay Siliconix
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IRFR1205

(IRFR1205 / IRFU1205) Power MOSFET

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