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PDF DE375-102N10A Data sheet ( Hoja de datos )
| Número de pieza | DE375-102N10A | |
| Descripción | RF Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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DE375-102N10A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
VDSS
ID25
= 1000 V
= 10 A
Symbol
VDSS
VDGR
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
1000 V
1000 V
RDS(on)
PDC
=
=
1.2 Ω
940 W
VGS
Continuous
±20 V
VGSM
Transient
±30 V
ID25 Tc = 25°C
10 A
IDM Tc = 25°C, pulse width limited by TJM
60 A
IAR Tc = 25°C
10 A
EAR
Tc = 25°C
30 mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
5 V/ns
>200 V/ns
PDC
PDHS
Tc = 25°C
Derate 4.4W/°C above 25°C
940 W
425
W GATE
DRAIN
PDAMB
Tc = 25°C
4.5 W
RthJC
0.16 C/W
SG1 SG2
SD1 SD2
RthJHS
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
0.23 C/W
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ. max.
VGS = 0 V, ID = 3 ma
1000
V
VDS = VGS, ID = 4 ma
2.5 5.5 V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
50 µA
1 mA
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
1.2 Ω
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
gfs
TJ
TJM
Tstg
TL
Weight
VDS = 15 V, ID = 0.5ID25, pulse test
1.6mm (0.063 in) from case for 10 s
6 18
S Advantages
-55
+150 °C
• Optimized for RF and high speed
switching at frequencies to 50MHz
150
°C • Easy to mount—no insulators needed
-55 +150 °C • High power density
300 °C
3g
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet DE375-102N10A.PDF ] | |
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