IRFU3504PbF Datasheet PDF - International Rectifier
| Part Number | IRFU3504PbF | |
| Description | AUTOMOTIVE MOSFET | |
| Manufacturers | International Rectifier | |
| Logo |  |
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There is a preview and IRFU3504PbF download ( pdf file ) link at the bottom of this page. Total 11 Pages | ||
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PD - 95315A
AUTOMOTIVE MOSFET IRFR3504PbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Addi-
tional features of this product are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
IRFU3504PbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 9.2mΩ
ID = 30A
S
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
IRFR3504
I-Pak
IRFU3504
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
87
61
30
350
140
0.92
± 20
240
480
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.09
50
110
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
12/13/04
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100
LIMITED BY PACKAGE
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFR/U3504PbF
2.5
I D = 87A
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRFU3504PbF electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRFU3504PbF.PDF Datasheet ] | |
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