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IKW40T120 の電気的特性と機能

IKW40T120のメーカーはInfineon Technologiesです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IKW40T120
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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IKW40T120 Datasheet, IKW40T120 PDF,ピン配置, 機能
TrenchStop® Series
IKW40T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Best in class TO247
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
G
E
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW40T120 1200V 40A
1.7V
150C K40T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-247-3
Value
1200
75
40
105
105
80
40
105
20
10
270
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPV TD VLS
1
Rev. 2.3 12.03.2013

1 Page





IKW40T120 pdf, ピン配列
TrenchStop® Series
IKW40T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.45
0.81
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Symbol
Conditions
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=1.5mA
VGE = 15V, IC=40A
Tj=25C
Tj=125C
Tj=150C
VGE=0V, IF=40A
Tj=25C
Tj=125C
Tj=150C
IC=1.5mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25C
Tj=150C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=40A
min.
1200
-
-
-
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.1
2.3
1.75
1.75
1.75
5.8
-
-
-
21
6
Unit
max.
-V
2.3
-
-
2.3
-
-
6.5
mA
0.4
4.0
600 nA
-S
Ω
IFAG IPV TD VLS
3
Rev. 2.3 12.03.2013


3Pages


IKW40T120 電子部品, 半導体
TrenchStop® Series
IKW40T120
100A
80A
60A
TC=80°C
TC=110°C
40A
Ic
20A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15)
100A
10A
1A
tp=3µs
10µs
50µs
150µs
500µs
20ms
DC
0,1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 150C;VGE=15V)
250W
200W
150W
100W
50W
0W
25°C
50°C
75°C 100°C 125°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 150C)
70A
60A
50A
40A
30A
20A
10A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 150C)
IFAG IPV TD VLS
6
Rev. 2.3 12.03.2013

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IKW40T120

IGBT ( Insulated Gate Bipolar Transistor )

Infineon Technologies
Infineon Technologies


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