DataSheet.jp

IRFY340CM の電気的特性と機能

IRFY340CMのメーカーはInternational Rectifierです、この部品の機能は「POWER MOSFET N-CHANNEL」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFY340CM
部品説明 POWER MOSFET N-CHANNEL
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRFY340CMダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

IRFY340CM Datasheet, IRFY340CM PDF,ピン配置, 機能
Previous Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD 9.1290B
HEXFET® POWER MOSFET
IRFY340CM
N-CHANNEL
400 Volt, 0.55HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Product Summary
Part Number
IRFY340CM
BVDSS
400V
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Features
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelets
RDS(on)
0.55
ID
8.7A
Absolute Maximum Ratings
Parameter
ID @ VGS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
Gate-to-Source Voltage
Single PulseAvalance Energy ‚
Avalance Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
IRFY340CM
8.7
5.5
35
100
0.8
±20
520
8.7
10
4.0
-55 to 150
300 (0.063 in (1.6mm) from
case for 10 sec)
4.3 (typical)
Units
A
W
W/K…
V
mJ
A
mJ
V/ns
°C
°C
g

1 Page





IRFY340CM pdf, ピン配列
Previous Datasheet
Index
Next Data Sheet
IRFY340CM Device
Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 — Typical Output Characteristics
TC = 150°C
ID = 8.7A
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs. Temperature
ID = 8.7A
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
To Order


3Pages


IRFY340CM 電子部品, 半導体
Previous Datasheet
IRFY340CM Device
Index
Next Data Sheet
Notes:
 Repetitive Rating; Pulse width limited by maximum
junction temperature (see figure 11).
‚ @ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)]
Peak IL = 8.7A, VGS = 10V, 25 RG 200(figure 12)
ƒ ISD 8.7A, di/dt 120A/µs, VDD BVDSS, TJ 150°C
„ Pulse width 300 µs; Duty Cycle 2%
… K/W = °C/W
W/K = W/°C
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions — TO-257AA
Pin 1 - Drain
Pin 2 - Source
Pin 3 - Gate
TO-257AA
3
2
1
NON-STANDARD PIN CONFIGURATION
Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source
Order Part Type IRFY340C
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4. Outline conforms to JEDEC outline TO-257AA
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
6/96
To Order

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ IRFY340CM データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFY340CM

POWER MOSFET N-CHANNEL

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap