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PDF IXFH15N80Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH15N80Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
IXFH 15N80Q
IXFT 15N80Q
VDSS
ID25
RDS(on)
=
=
=
trr £ 250 ns
800 V
15 A
0.60 W
Symbol
VDSS
VDGR
V
GS
VGSM
ID25
IDM
I
AR
EAR
EAS
dv/dt
PD
TJ
T
JM
T
stg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T
J
£
150°C,
R
G
=
2
W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
800 V
800 V
±20 V
±30 V
15 A
60 A
15 A
30 mJ
1.0 J
5 V/ns
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V
DSS
V = 0 V, I = 3 mA
GS D
VGS(th)
VDS = VGS, ID = 4 mA
IGSS VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
R
DS(on)
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
800 V
2.0 4.5 V
±100 nA
25 mA
1 mA
0.60 W
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) (IXFT) Case Style
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Qg process
• International standard packages
• Low RDS (on)
• Unclamped Inductive Switching (UIS)
rated
• Fast switching
• Molding epoxies meet UL94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98514B (7/00)
1-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFH15N80Q.PDF ] | |
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