IRHM7160 Datasheet PDF - International Rectifier
| Part Number | IRHM7160 | |
| Description | (IRHM7160 / IRHM8160) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | |
| Manufacturers | International Rectifier | |
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There is a preview and IRHM7160 download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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PD - 91331B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM7160
IRHM8160
N-CHANNEL
MEGA RAD HARD
100Volt, 0.045Ω, MEGA RAD HARD HEXFET Product Summary
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x106 Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 105 Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Part Number
IRHM7160
IRHM8160
BVDSS
100V
100V
RDS(on)
0.045Ω
0.045Ω
ID
35*A
35*A
Features:
n Radiation Hardened up to 1 x 106 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Absolute Maximum Ratings
Pre-Irradiation
Parameter
IRHM7230, IRHM8230 Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
35*
35* A
201
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
±20
500
35
25
7.3
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (typical)
g
www.irf.com
1
10/15/98
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Pre-Irradiation
IRHM7160, IRHM8160 Devices
10000
8000
6000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
Coss
2000
0
1
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 35A
16
VDS = 80V
VDS = 50V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240 280
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25 ° C
VGS = 0 V
1
0.4 0.8 1.2 1.6 2.0 2.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100 100us
1ms
10 10ms
TC = 25 °C
TJ = 150° C
Single Pulse
1
1 10
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRHM7160 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRHM7160.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| IRHM7160 | The function is (IRHM7160 / IRHM8160) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR. International Rectifier | |
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