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PDF IRHE7130 Data sheet ( Hoja de datos )
| Número de pieza | IRHE7130 | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRHE7130 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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PD - 90713E
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
IRHE7230
JANSR2N7262U
200V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD-Hard™ HEXFET® MOSFET
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHE7230 100K Rads (Si) 0.35Ω 5.5A JANSR2N7262U
IRHE3230 300K Rads (Si) 0.35Ω 5.5A JANSF2N7262U
IRHE4230 600K Rads (Si) 0.35Ω 5.5A JANSG2N7262U
IRHE8230 1000K Rads (Si) 0.35Ω 5.5A JANSH2N7262U
LCC - 18
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
5.5
3.5 A
22
25 W
0.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
±20
240
—
—
5.0
-55 to 150
V
mJ
A
mJ
V/ns
oC
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s)
0.42 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
02/01/01
1 page  
Pores-tI-rIrraraddiaiatitoionn
IRHE7230, JANSR2N7262U
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals
of Rad Hard HEXFET During 80% of BVDSS During Radiation
1x1012 Rad (Si)/Sec Exposure
www.irf.com
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5
5 Page 
Pre-Irradiation
IRHE7230, JANSR2N7262U
15V
VDS
L
D R IV E R
RG
2V0GVS
tp
D .U .T
IA S
0.01Ω
+
- VDD
A
Fig 29a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 29c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 29b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig 30a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRHE7130.PDF ] | |
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