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IRHE7130 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHE7130
部品説明 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHE7130 Datasheet, IRHE7130 PDF,ピン配置, 機能
PD - 90713E
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
IRHE7230
JANSR2N7262U
200V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD-HardHEXFET® MOSFET
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHE7230 100K Rads (Si) 0.355.5A JANSR2N7262U
IRHE3230 300K Rads (Si) 0.355.5A JANSF2N7262U
IRHE4230 600K Rads (Si) 0.355.5A JANSG2N7262U
IRHE8230 1000K Rads (Si) 0.355.5A JANSH2N7262U
LCC - 18
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
5.5
3.5 A
22
25 W
0.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
±20
240
5.0
-55 to 150
V
mJ
A
mJ
V/ns
oC
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s)
0.42 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
02/01/01

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

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