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Datasheet FP10R06KL4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FP10R06KL4 | Elektrische Eigenschaften / Electrical properties Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP10R06KL4
Vorläufig Preliminary
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak r |  ETC | data |
FP1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FP100 | HIGH PERFORMANCE PHEMT PRELIMINARY DATA SHEET
FP100
HIGH PERFORMANCE PHEMT
• FEATURES ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz
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DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5  Filtronic Compound Semiconductors data | | |
| 2 | FP1000 | (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES ETC diode | | |
| 3 | FP1000A | (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES ETC diode | | |
| 4 | FP1009 | (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES ETC diode | | |
| 5 | FP1009A | (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES ETC diode | | |
| 6 | FP100F | Spice Model
Spice Model
FP100F
Electrical Characteristics and Maximum Ratings
Part Number Working Reverse Voltage (Vrwm) Average Rectified Current (Io) 55°C(1) 100°C(2) 25°C Volts FP100F Amps Amps µA Reverse Current @ Vrwm (Ir) 100°C µA Forward Voltage 1 Cycle Repetitive Reverse Sur  VMI data | | |
| 7 | FP100F | RECTIFIER STACKS 2.2 A FORWARD CURRENT 3000 NS RECOVERY TIME New Jersey Semiconductor rectifier | |
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