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SPP06N80C3のメーカーはInfineon Technologiesです、この部品の機能は「Cool MOS Power Transistor」です。 |
部品番号 | SPP06N80C3 |
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部品説明 | Cool MOS Power Transistor | ||
メーカ | Infineon Technologies | ||
ロゴ | |||
このページの下部にプレビューとSPP06N80C3ダウンロード(pdfファイル)リンクがあります。 Total 12 pages
Final data
SPP06N80C3
SPA06N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS
RDS(on)
ID
800 V
0.9 Ω
6A
• Periodic avalanche rated
P-TO220-3-31 P-TO220-3-1
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
1 23
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP06N80C3
SPA06N80C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4351
P-TO220-3-31 Q67040-S4435
Marking
06N80C3
06N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=1.2A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP
SPA
6 61)
3.8 3.81)
18 18
230 230
Unit
A
A
mJ
0.2 0.2
66
±20 ±20
±30 ±30
83 39
-55...+150
A
V
W
°C
Page 1
2003-07-02
1 Page Final data
SPP06N80C3
SPA06N80C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
VDS≥2*ID*RDS(on)max,
ID=3.8A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=400V, VGS=0/10V,
ID=6A,
RG=15Ω, Tj=125°C
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs VDD=640V, ID=6A
Qgd
Qg VDD=640V, ID=6A,
VGS=0 to 10V
V(plateau) VDD=640V, ID=6A
min.
-
Values
typ. max.
4-
Unit
S
- 785 - pF
- 390 -
- 20 -
- 22 -
- 42 -
- 25 - ns
- 15 -
- 65 75
- 8 11
- 3.3 - nC
- 14 -
- 27 35
- 6 -V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Soldering temperature for TO-263: 220°C, reflow
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Page 3
2003-07-02
3Pages 5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
Final data
SPP06N80C3
SPA06N80C3
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
10 -1
D = 0.5
10 -1
D = 0.5
D = 0.2
D = 0.2
D = 0.1
D = 0.1
D = 0.05
D = 0.05
D = 0.02
D = 0.02
D = 0.01
10 -2
D = 0.01
10 -2
single pulse
single pulse
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
s 10 -1
tp
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
20
A 20V
10V
16
14
12
10
8
6
4
2
8V
7V
6V
5V
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
11
A 20V
10V
8V
9
8
7
6
5
4
3
2
1
7V
6V
5.5V
5V
4.5V
4V
00 5 10 15 20 V 30
VDS
00 5 10 15 20 V 30
VDS
Page 6
2003-07-02
6 Page | |||
ページ | 合計 : 12 ページ | ||
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PDF ダウンロード | [ SPP06N80C3 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SPP06N80C2 | Cool MOS Power Transistor | Infineon Technologies |
SPP06N80C3 | Cool MOS Power Transistor | Infineon Technologies |