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SPP06N80C3 の電気的特性と機能

SPP06N80C3のメーカーはInfineon Technologiesです、この部品の機能は「Cool MOS Power Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SPP06N80C3
部品説明 Cool MOS Power Transistor
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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SPP06N80C3 Datasheet, SPP06N80C3 PDF,ピン配置, 機能
Final data
SPP06N80C3
SPA06N80C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS
RDS(on)
ID
800 V
0.9
6A
Periodic avalanche rated
P-TO220-3-31 P-TO220-3-1
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
1 23
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP06N80C3
SPA06N80C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4351
P-TO220-3-31 Q67040-S4435
Marking
06N80C3
06N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=1.2A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP
SPA
6 61)
3.8 3.81)
18 18
230 230
Unit
A
A
mJ
0.2 0.2
66
±20 ±20
±30 ±30
83 39
-55...+150
A
V
W
°C
Page 1
2003-07-02

1 Page





SPP06N80C3 pdf, ピン配列
Final data
SPP06N80C3
SPA06N80C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
VDS2*ID*RDS(on)max,
ID=3.8A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=400V, VGS=0/10V,
ID=6A,
RG=15, Tj=125°C
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs VDD=640V, ID=6A
Qgd
Qg VDD=640V, ID=6A,
VGS=0 to 10V
V(plateau) VDD=640V, ID=6A
min.
-
Values
typ. max.
4-
Unit
S
- 785 - pF
- 390 -
- 20 -
- 22 -
- 42 -
- 25 - ns
- 15 -
- 65 75
- 8 11
- 3.3 - nC
- 14 -
- 27 35
- 6 -V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Soldering temperature for TO-263: 220°C, reflow
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Page 3
2003-07-02


3Pages


SPP06N80C3 電子部品, 半導体
5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
Final data
SPP06N80C3
SPA06N80C3
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
10 -1
D = 0.5
10 -1
D = 0.5
D = 0.2
D = 0.2
D = 0.1
D = 0.1
D = 0.05
D = 0.05
D = 0.02
D = 0.02
D = 0.01
10 -2
D = 0.01
10 -2
single pulse
single pulse
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
s 10 -1
tp
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
20
A 20V
10V
16
14
12
10
8
6
4
2
8V
7V
6V
5V
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
11
A 20V
10V
8V
9
8
7
6
5
4
3
2
1
7V
6V
5.5V
5V
4.5V
4V
00 5 10 15 20 V 30
VDS
00 5 10 15 20 V 30
VDS
Page 6
2003-07-02

6 Page



ページ 合計 : 12 ページ
 
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共有リンク

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部品番号部品説明メーカ
SPP06N80C2

Cool MOS Power Transistor

Infineon Technologies
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SPP06N80C3

Cool MOS Power Transistor

Infineon Technologies
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