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PDF PNA1605F Data sheet ( Hoja de datos )
| Número de pieza | PNA1605F | |
| Descripción | Silicon planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Phototransistors
PNA1605F (PN116)
Silicon planar type
For optical control systems
■ Features
• High sensitivity
• Wide directivity characteristics, suited for detecting GaAs LEDs:
θ = 70° (typ.)
• Fast response: tr , tf = 8 µs (typ.)
• Side-view type package
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-emitter voltage (Base open)
Collector-base voltage (Emitter open)
Emitter-collector voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
VCEO
VCBO
VECO
VEBO
IC
PC
Topr
Tstg
20
30
5
5
10
100
−25 to +85
−30 to +100
Unit
V
V
V
V
mA
mW
°C
°C
4.5±0.15
3.5±0.15
Unit: mm
2.1±0.15
1.6±0.15
0.8±0.1
3-0.45±0.2
0.45±0.2
1.27 1.27
1 23
1: Emitter
2: Collector
3: Base
LSTFR103-001 Package
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Photocurrent *1
ICE(L) VCE = 10 V, L = 100 lx
0.2 0.8
Dark current
ICEO VCE = 10 V
0.05 2.00
Peak emission wavelength
λp VCE = 10 V
900
Half-power angle
θ The angle from which photocurrent
70
becomes 50%
Rise time *2
Fall time *2
Collector-emitter saturation voltage *1
tr
tf
VCE(sat)
VCC = 10 V, ICE(L) = 1 mA, RL = 100 Ω
ICE(L) = 1 mA, L = 1 000 lx
8
9
0.3 0.6
Unit
mA
µA
nm
°
µs
µs
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
50 Ω
VCC
Sig. out
RL
(Input pulse)
td: Delay time
(Output pulse) td
tr
90%
10%
tf
tr: Rise time
tf: Fall time
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00003BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PNA1605F.PDF ] | |
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