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PDF IXFR12N100Q Data sheet ( Hoja de datos )
| Número de pieza | IXFR12N100Q | |
| Descripción | N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
HiPerFETTM Power MOSFETs
VDSS
ID25
ISOPLUS247TM Q CLASS IXFR 12N100Q 1000 V 10 A
IXFR 10N100Q 1000 V 9 A
(Electrically Isolated Back Surface)
trr £ 200 ns
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
RDS(on)
1.05 W
1.20 W
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
T
J
TJM
T
stg
TL
VISOL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse width limited by TJM
TC = 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V
DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
12N100
10N100
12N100
10N100
12N100
10N100
1000
1000
±20
±30
10
9
48
40
12
10
30
5
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
250
-55 ... +150
150
-55 ... +150
300
2500
5
W
°C
°C
°C
°C
V~
g
ISOPLUS 247TM
G
D Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Symbol
Test Conditions
VDSS
V
GS(th)
I
GSS
IDSS
RDS(on)
VGS = 0 V, ID = 3mA
V = V , I = 4mA
DS GS D
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 • VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 1 & 2
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
1000
V
2.5 5.5 V
±100 nA
TJ = 25°C
TJ = 125°C
12N100
10N100
50 mA
1 mA
1.05 W
1.2 W
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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