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IGB01N120H2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IGB01N120H2
部品説明 IGBT
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 

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IGB01N120H2 Datasheet, IGB01N120H2 PDF,ピン配置, 機能
IGB01N120H2
HighSpeed 2-Technology
Designed for frequency inverters for washing
machines, fans, pumps and vacuum cleaners
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
Qualified according to JEDEC2 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
C
G
E
PG-TO263-3-2
Type
IGB01N120H2
VCE
IC
Eoff
Tj
1200V 1A 0.09mJ 150°C
Marking
G01H1202
Package
PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
3.2
1.3
3.5
3.5
±20
28
-40...+150
245
Unit
V
A
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.4 Oct. 07

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