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IRFP245 の電気的特性と機能

IRFP245のメーカーはIntersil Corporationです、この部品の機能は「(IRFP244 / IRFP245 / IRFP246 / IRFP247) N-Channel Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFP245
部品説明 (IRFP244 / IRFP245 / IRFP246 / IRFP247) N-Channel Power MOSFETs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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IRFP245 Datasheet, IRFP245 PDF,ピン配置, 機能
Semiconductor
July 1998
IRFP244, IRFP245,
IRFP246, IRFP247
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
Features
• 15A and 14A, 275V and 250V
• rDS(ON) = 0.28and 0.34
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250VDC Rated, 120VAC Line System Operation
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP244
TO-247
IRFP244
IRFP245
TO-247
IRFP245
IRFP246
TO-247
IRFP246
IRFP247
TO-247
IRFP247
NOTE: When ordering, include the entire part number.
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2211.2

1 Page





IRFP245 pdf, ピン配列
IRFP244, IRFP245, IRFP246, IRFP247
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
CISS
COSS
CRSS
LD
LS
VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 11)
Measured fRom the
Drain Lead, 6mm
(0.25in) From Pack-
age to the Center of
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
Measured from The
Source Lead, 6mm
(0.25in) from the
Header to the Source
Bonding Pad
G
LD
LS
S
Junction to Case
Junction to Ambient
RθJC
RθJA
Free Air Operation
MIN TYP MAX UNITS
- 1300 -
pF
- 320 -
pF
- 69 - pF
- 5.0 -
nH
- 12.5 -
nH
- - 0.83 oC/W
- - 30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN TYP
--
--
MAX
15
60
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 15A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs
--
150 300
1.6 3.4
1.8
640
7.2
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.0µH, RG = 25, peak IAS = 15A. See Figures 15, 16.
V
ns
µC
5-3


3Pages


IRFP245 電子部品, 半導体
IRFP244, IRFP245, IRFP246, IRFP247
Typical Performance Curves Unless Otherwise Specified (Continued)
15
VDS 50V
PULSE DURATION = 80µs
12
9
6
3
TJ = 25oC
TJ = 150oC
100
10
TJ = 150oC
1
TJ = 25oC
0
0
5
10 15
20 25
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0.1
0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
2.0
20
ID = 15A
16
12
8
VDS = 50V
VDS = 125V
VDS = 200V
4
0
0 12 24 36 48 60
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-6

6 Page



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共有リンク

Link :


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