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EE-SJ3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 EE-SJ3
部品説明 Photomicrosensor (Transmissive)
メーカ ETC
ロゴ ETC ロゴ 



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EE-SJ3 Datasheet, EE-SJ3 PDF,ピン配置, 機能
EE-SJ3 Series
Dimensions
Note: All units are in millimeters unless otherwise indicated.
0.3 Center mark
6.2
Photomicrosensor
(Transmissive)
Features
High-resolution model with a 0.2-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing
aperture, and model with a horizontal sensing aperture
are available.
All models have a 3 mm wide slot.
7.2±0.2
6
Cross section BB
0.2
10.2
7.6±0.3
Four, 0.25
Four, 0.5
2.54±0.2
Cross section AA
Model
Aperture (a x b)
EE-SJ3-C
2.1 x 1.0
Internal Circuit
EE-SJ3-D
2.1 x 0.2
K
C EE-SJ3-G
0.5 x 2.1
Unless otherwise specified, the
tolerances are as shown below.
A E Dimensions
3 mm max.
Terminal No.
A
K
Name
Anode
Cathode
3 < mm 6
6 < mm 10
C
Collector
10 < mm 18
E
Emitter
18 < mm 30
Ordering Information
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rated value
Emitter
Forward current IF
50 mA
(see note 1)
Pulse forward
current
IFP
1A
(see note 2)
Detector
Reverse voltage
Collector--Emitter
voltage
VR
VCEO
4V
30 V
Emitter--Collector VECO
voltage
---
Collector current
Collector
dissipation
IC
PC
20 mA
100 mW
(see note 1)
Ambient
Operating
temperature Storage
Topr
--25°C to 85°C
Tstg --30°C to 100°C
Soldering temperature
Tsol 260°C
(see note 3)
Note:
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Photomicrosensor (Transmissive)
Description
Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Emitter
Detector
Rising time
Forward voltage
Reverse current
Peak emission
wavelength
Light current
Dark current
Leakage current
Collector--Emitter
saturated voltage
Peak spectral sensitivity
wavelength
VF
IR
λP
IL
ID
ILEAK
VCE (sat)
λP
tr
EE-SJ3-C
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
Value
EE-SJ3-D
1 to 28 mA typ.
0.1 mA min.
2 nA typ., 200 nA max.
---
0.1 V typ.,
0.4 V max.
---
850 nm typ.
4 µs typ.
Falling time
tf 4 µs typ.
EE-SJ3-G
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
Part number
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
Condition
IF = 30 mA
VR = 4 V
IF = 20 mA
IF = 20 mA, VCE = 10 V
VCE = 10 V, 0 x
---
IF = 20 mA,
IL = 0.1 mA
VCE = 10 V
VCC = 5 V,
RL = 100 ,
IL = 5 mA

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